Abstract:
Among solid-state approaches to quantum computing devices, spin-based silicon quantum bits (qubits) are gaining increasing attention, especially after the recent achievement of long spin coherence times in nuclear-spin-free 28Si [1,2]. At the same time, the enormous engineering know-how and fabrication capabilities of silicon microelectronics industry is foreseen as a clear asset in the challenging task of up-scaling silicon spin qubits toward complex quantum systems, possibly embedding co-integrated classical control electronics. Therefore, the implementation of silicon spin qubits on a foundry-compatible CMOS platform represents a compelling step. With this in mind, we have recently shown that both few-electron [3] and few-hole quantum dots [4] can be formed in silicon nanowire transistors based on foundry-compatible, 300-mm silicon-on-insulator technology. In the case of holes, g-factors are found to be anisotropic and gate dependent providing a pathway to electrically driven spin manipulation via the g-tensor modulation resonance mechanism [4]. I will present the first realizations of double quantum dots in dual-gate nanowire transistors. In these devices we have observed the spin-blockade effect (useful for spin readout) [5,6], electrically driven hole-spin resonance, and hole-spin qubit functionality [7].
References
[1] M. Veldhorst et al., Nature Nanotechnology 9, 981 (2014).
[2] J. T. Muhonen et al., Nature Nanotechnology 9, 986 (2014).
[3] B. Voisin et al., Nano Letters 14(4), 2094 (2014).
[4] B. Voisin et al., Nano Letters 6(1), 88 (2015).
[5] D. Kotekar Patil et al., arXiv:1606.05855.
[6] H. Bohuslavskyi et al., arXiv:1607.00287.
[7] R. Maurand et al., arXiv:1605.07599.
